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| HWL30NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Features * * * * Low Cost GaAs Power FET Class A or Class AB Operation 15 dB Typical Gain at 2.4 GHz 5V to 10V Operation 650 860 Outline Dimensions S ou rce 1 4 Description The HWL30NC is a medium power GaAs FET designed for various L-band & S-band applications. 430 2 5 Absolute Maximum Ratings VDS VGS ID IG TCH TSTG PT * 210 3 6 Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Channel Temperature Storage Temperature Power Dissipation +15V -5V IDSS 3mA 175C -65 to +175C 6W Units: m Thickness: 100 5 Chip size 50 Bond Pads 1-3 (Gate): Bond Pads 4-6 (Drain): 0.0 58.5 344.5 400.0 S ou rce 0 * mounted on an infinite heat sink 60 x 60 60 x 60 Electrical Specifications (TA=25C) f =2.4 GHz for all RF Tests Symbol IDSS Parameters & Conditions Saturated Current at VDS=3V, VGS=0V Units mA Min. 500 Typ. 600 Max. 900 VP Pinch-off Voltage at VDS=3V, ID=30mA V -3.5 -2.0 -1.5 gm P1dB Transconductance at VDS=3V, ID=300mA Power Output at Test Points VDS=10V, ID=0.5 IDSS Gain at 1dB Compression Point VDS=10V, ID=0.5 IDSS Power-Added Efficiency (POUT = P1dB) VDS=10V, ID=0.5 IDSS mS - 300 - dBm 30 31 - G1dB dB 13 14 - PAE % 30 40 - Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. . HWL30NC L-Band Power FET Non-Via Hole Chip Autumn 2002 V1 Small Signal Common Source Scattering Parameters S-MAGN AND ANGLES VDS=10V, IDS=0.5IDSS (GHz) 0.50 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 1.40 1.50 1.60 1.70 1.80 1.90 2.00 2.10 2.20 2.30 2.40 2.50 2.60 2.70 2.80 2.90 3.00 3.10 3.20 3.30 3.40 3.50 3.60 3.70 3.80 3.90 4.00 lS11l 0.828 0.812 0.830 0.811 0.817 0.828 0.813 0.819 0.826 0.823 0.825 0.827 0.826 0.827 0.825 0.827 0.828 0.833 0.828 0.830 0.828 0.831 0.834 0.835 0.833 0.836 0.833 0.836 0.838 0.837 0.836 0.839 0.837 0.839 0.842 0.841 ANG -86.85 -96.54 -105.89 -113.18 -119.32 -125.06 -129.80 -134.07 -137.82 -141.15 -144.18 -146.87 -149.28 -151.54 -153.65 -155.43 -157.32 -158.78 -160.58 -162.09 -163.58 -164.72 -165.96 -167.28 -168.27 -169.57 -170.52 -171.64 -172.52 -173.45 -174.25 -175.18 -176.22 -176.89 -177.66 -178.41 lS21l 11.250 10.165 9.290 8.497 7.841 7.249 6.716 6.254 5.852 5.512 5.178 4.911 4.654 4.405 4.191 4.006 3.834 3.684 3.520 3.376 3.240 3.129 3.028 2.924 2.816 2.724 2.645 2.567 2.490 2.417 2.351 2.288 2.219 2.171 2.109 2.058 ANG 128.50 123.44 118.75 114.64 110.70 107.12 104.30 101.39 98.89 96.61 94.31 92.03 90.18 88.40 86.65 84.67 83.00 81.40 79.85 78.29 76.79 75.41 73.96 72.59 71.13 69.69 68.48 67.26 65.95 64.77 63.57 62.34 61.01 59.76 58.57 57.50 lS12l 0.016 0.018 0.019 0.020 0.022 0.022 0.022 0.023 0.024 0.025 0.025 0.026 0.027 0.027 0.028 0.029 0.029 0.029 0.031 0.031 0.032 0.032 0.033 0.034 0.035 0.035 0.036 0.038 0.038 0.039 0.040 0.040 0.042 0.043 0.044 0.045 ANG 55.74 52.29 49.15 48.79 49.43 48.53 47.08 47.20 48.68 48.10 48.54 48.16 50.97 51.47 52.13 52.99 52.40 54.16 54.55 57.09 57.32 58.39 60.60 58.77 59.69 60.61 60.44 62.05 63.14 64.60 66.22 66.35 66.45 67.29 67.01 68.10 lS22l 0.176 0.177 0.174 0.175 0.171 0.170 0.176 0.175 0.180 0.184 0.184 0.192 0.199 0.199 0.202 0.207 0.213 0.220 0.217 0.220 0.223 0.230 0.237 0.239 0.243 0.245 0.251 0.253 0.260 0.262 0.267 0.273 0.275 0.285 0.288 0.294 ANG -36.18 -39.82 -43.49 -45.31 -51.83 -57.06 -57.77 -59.91 -62.53 -63.07 -65.11 -67.30 -68.13 -69.23 -69.96 -72.44 -73.28 -74.11 -75.73 -77.08 -79.08 -79.62 -80.79 -81.99 -84.61 -85.61 -86.53 -87.36 -88.89 -90.54 -91.89 -92.75 -95.00 -95.58 -97.50 -98.70 Bonding Manner Gate, drain pad: 1 wire on each pad Source pad: 2 wires on each side Hexawave Inc. 2 Prosperity Road II, Science Park, Hsinchu, Taiwan, R.O.C.. TEL 886-3-578-5100 FAX 886-3-577-0512 http://www.hw.com.tw Email: sales@hw.com.tw All specifications are subject to change without notice. . |
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